The book is a follow-up to the computerized fullerene bibliography related to the 1985-1993 period. It is a well-indexed overview of the journal literature on a topic for which the 1996 Nobel Prize in Chemistry was awarded. It is an indispensable tool for any specialist interested in the literature of one of the most researched interdisciplinary topics in the sciences.

Astronomy and Astrophysics Abstracts, which has appeared in semi-annual volumes since 1969, is devoted to the recording, summarizing and indexing of astronomical publications throughout the world. It is prepared under the auspices of the International Astronomical Union (according to a resolution adopted at the 14th General Assembly in 1970). Astronomy and Astrophysics Abstracts aims to present a comprehensive documenta tion of literature in all fields of astronomy and astrophysics. Every effort will be made to ensure that the average time interval between the date of receipt of the original literature and publication of the abstracts will not exceed eight months. This time interval is near to that achieved by monthly abstracting journals, compared to which our system of accumu lating abstracts for about six months offers the advantage of greater convenience for the user. Volume 31 contains literature published in 1982 and received before July 15, 1982; some older literature which was received late and which is not recorded in earlier volumes is also included. We acknowledge with thanks contributions to this volume by Dr. J. Bouska, Prague, who surveyed journals and publications in Czech and supplied us with abstracts in English .

Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon

Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

The recent rapid progress in wireless telecommunication, including the Internet of Things, 5th generation wireless systems, satellite broadcasting, and intelligent transport systems has increased the need for low-loss dielectric materials and modern fabrication techniques. These materials have excellent electrical, dielectric, and thermal properties and have enormous potential, especially in wireless communication, flexible electronics, and printed electronics. Microwave Materials and Applications discusses the methods commonly employed for measuring microwave dielectric properties, the various attempts reported to solve problems of materials chemistry and crystal structure, doping, substitution, and composite formation, highlighting the processing techniques, morphology influences, and applications of microwave materials whilst summarizing many of the recent technical research accomplishments in the area of microwave dielectrics and applications Chapters examine: Oxide ceramics for dielectric resonators and substrates HTCC, LTCC and ULTCC tapes for substrates Polymer ceramic composites for printed circuit boards Elastomer-ceramic composites for flexible electronics Dielectric inks EMI shielding materials Microwave ferrites A comprehensive Appendix presents the fundamental properties for more than 4000 low-loss dielectric ceramics, their composition, crystal structure, and their microwave dielectric properties. Microwave Materials and Applications presents a comprehensive view of all aspects of microwave materials and applications, making it useful for scientists, industrialists, engineers, and students working on current and emerging applications of wireless communications and consumer electronics.

This volume contains very carefully compiled material presenting bibliographic descriptions of approximately 3500 papers, with a computer-generated index on authors, subject headings, corporate addresses and journals. There are many on-line services available on fullerenes, but they serve mainly current-awareness functions; none of them is selectively complete and carefully indexed and none can replace a complete retrospective bibliography, which most researchers in the field would want to have on hand in their laboratories and offices.

This book presents the basic physics of ferroelectric and antiferroelectric liquid crystals in a simple and transparent way. It treats both the basic and the applied aspects of ferroelectric and antiferroelectric liquid crystal research, starting from the discovery of ferroelectricity in liquid crystals in 1975 and ending with the resonant X-ray experiment in ferrielectric and antiferrielectric phases in 1998. Particular attention is paid to the optical properties, electrooptic effects, phase transitions and experimental methods used in liquid crystal research. Special chapters are devoted to dielectric spectroscopy, light scattering, NMR, STM and AFM in complex fluids. The more than 300 illustrations help to present the basic physics of liquid crystalline ferroelectrics and antiferroelectrics in a way that can be easily followed by students, engineers and scientists dealing with liquid crystal research.