Semiconductorelectronicsiscommonplaceineveryhousehold.Semiconductor deviceshavealsoenabledeconomicallyreasonable?ber-basedopticalcom- nication, optical storage and high-frequency ampli?cation and have recently revolutionizedphotography,displaytechnologyandlighting.Alongwiththese tremendous technological developments, semiconductors have changed the way we work, communicate, entertain and think. The technological progress of semiconductor materials and devices is evolving continuously with a large worldwide e?ort in human and monetary capital. For students, semicond- tors o?er a rich, diverse and exciting ?eld with a great tradition and a bright future. This book introduces students to semiconductor physics and semicond- tor devices. It brings them to the point where they can specialize and enter supervisedlaboratoryresearch.Itisbasedonthetwosemestersemiconductor physics course taught at Universit ̈ at Leipzig in its Master of Science physics curriculum. Since the book can be followed with little or no pre-existing knowledge in solid-state physics and quantum mechanics, it is also suitable for undergraduate students. For the interested reader some additional topics are included in the book that can be covered in subsequent, more speci- ized courses. The material is selected to provide a balance between aspects of solid-state and semiconductor physics, the concepts of various semiconductor devices and modern applications in electronics and photonics.

The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.

The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.

This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book. Key Features Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect Presents the optical processes in nanostructures under a magnetic field Includes illustrative problems with hints for solutions in each chapter Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.

The 26th International Conference on the Physics of Semiconductors was held from 29 July to 2 August 2002 at the Edinburgh International Conference Centre. It is the premier meeting in the field of semiconductor physics and attracted over 1000 participants from leading academic, governmental and industrial institutions in some 50 countries around t

This book describes the basic concepts of various physical phenomena in semiconductors and their modulated structures under high magnetic fields. The topics cover magneto-transport phenomena, cyclotron resonance, far-infrared spectroscopy, magneto-optical spectroscopy, diluted magnetic semiconductors in high magnetic fields, as well as the recent advances in the experimental techniques needed for high field experiments. Starting from the introductory part describing the basic theoretical background, each chapter introduces typical experimental data which were actually obtained in very high magnetic fields mostly in the pulsed field range up to several megagauss (20-100T). The book has both the character of a textbook and a monograph. For researchers and students with an interest in semiconductor physics or in high magnetic fields, it will serve as a useful guide.

The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

Televisions, telephones, watches, calculators, robots, airplanes and space vehicles all depend on silicon chips. Life as we know it would hardly be possible without semiconductor devices. An understanding of how these devices work requires a detailed knowledge of the physics of semiconductors, including charge transport and the emission and absorption of electromagnetic waves. This book may serve both as a university textbook and as a reference for research and microelectronics engineering. Each section of the book begins with a description of an experiment. The theory is then developed as far as necessary to understand the experimental results. Everyone with high-school mathematics should be able to follow the calculations. The band structure calculations for the diamond and zinc blende types of lattice are supplemented with a personal computer program. Semiconductor physics developed most rapidly in the two decades following the invention of the transistor, and naturally most of the references date from this time. But recent developments such as the Gunn effect, the acoustoelectric effect, superlattices, quantum well structures, and the quantum Hall effect are also discussed. The exercises provided (answers to which are available) will greatly assist the student in consolidating the material presented. From the reviews:"This book is a must for any theoretical and experimental physicist working in the area of semiconductor physics." #Physicalia#1

This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents: * Excitation Dynamics in Organic Semiconductors * Organic Field-Effect Transistors * Spectroscopy of Organic Semiconductors * Interfaces between Organic Semiconductors and Metals * Analysis and Modeling of Devices * Exciton Formation and Energy Transfer in Organic Light Emitting Diodes * Deposition and Characterization