Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

Mature sciences have been long been characterized in terms of the “successfulness”, “reliability” or “trustworthiness” of their theoretical, experimental or technical accomplishments. Today many philosophers of science talk of “robustness”, often without specifying in a precise way the meaning of this term. This lack of clarity is the cause of frequent misunderstandings, since all these notions, and that of robustness in particular, are connected to fundamental issues, which concern nothing less than the very nature of science and its specificity with respect to other human practices, the nature of rationality and of scientific progress; and science’s claim to be a truth-conducive activity. This book offers for the first time a comprehensive analysis of the problem of robustness, and in general, that of the reliability of science, based on several detailed case studies and on philosophical essays inspired by the so-called practical turn in philosophy of science.

Advances in Atomic, Molecular, and Optical Physics, Volume 72 highlights new advances in the field, with this new volume presenting interesting chapters written by an international board of authors. - Provides the authority and expertise of leading contributors from an international board of authors - Presents the latest release in the Advances in Atomic, Molecular, and Optical Physics series - Includes the latest information in the field