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BOOK EXCERPT:
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Product Details :
Genre |
: Technology & Engineering |
Author |
: Athanasios Dimoulas |
Publisher |
: Springer Science & Business Media |
Release |
: 2008-01-01 |
File |
: 397 Pages |
ISBN-13 |
: 9783540714910 |
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BOOK EXCERPT:
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Product Details :
Genre |
: Gate array circuits |
Author |
: Fred Roozeboom |
Publisher |
: The Electrochemical Society |
Release |
: 2006 |
File |
: 472 Pages |
ISBN-13 |
: 9781566775021 |
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BOOK EXCERPT:
Product Details :
Genre |
: Technology & Engineering |
Author |
: |
Publisher |
: |
Release |
: 2005 |
File |
: 658 Pages |
ISBN-13 |
: STANFORD:36105120928333 |
eBook Download
BOOK EXCERPT:
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Product Details :
Genre |
: Science |
Author |
: E. P. Gusev |
Publisher |
: The Electrochemical Society |
Release |
: 2010-04 |
File |
: 426 Pages |
ISBN-13 |
: 9781566777919 |
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BOOK EXCERPT:
Product Details :
Genre |
: |
Author |
: Eylem Durgun Özben |
Publisher |
: Forschungszentrum Jülich |
Release |
: 2014-03-20 |
File |
: 123 Pages |
ISBN-13 |
: 9783893369416 |
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BOOK EXCERPT:
Product Details :
Genre |
: |
Author |
: Y. Omura |
Publisher |
: The Electrochemical Society |
Release |
: 2015 |
File |
: 337 Pages |
ISBN-13 |
: 9781607685951 |
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BOOK EXCERPT:
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Product Details :
Genre |
: Gate array circuits |
Author |
: V. Narayanan |
Publisher |
: The Electrochemical Society |
Release |
: 2009-05 |
File |
: 367 Pages |
ISBN-13 |
: 9781566777094 |
eBook Download
BOOK EXCERPT:
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Product Details :
Genre |
: Gate array circuits |
Author |
: P. J. Timans |
Publisher |
: The Electrochemical Society |
Release |
: 2008-05 |
File |
: 488 Pages |
ISBN-13 |
: 9781566776264 |
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BOOK EXCERPT:
The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Product Details :
Genre |
: Dielectrics |
Author |
: S. Kar |
Publisher |
: The Electrochemical Society |
Release |
: 2008-10 |
File |
: 550 Pages |
ISBN-13 |
: 9781566776516 |
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BOOK EXCERPT:
Product Details :
Genre |
: |
Author |
: S. Kar |
Publisher |
: The Electrochemical Society |
Release |
: 2014 |
File |
: 203 Pages |
ISBN-13 |
: 9781607685456 |