Novel heterostructure devices. Electron-phonon interactions in intersubband laser heterostructures / M.V. Kisin, M. Dutta, and M.A. Stroscio -- Quantum dot infrared detectors and sources / P. Bhattacharya ... [et al.] -- Generation of terahertz emission based on intersubband transitions / Q. Hu -- Mid-infrared GaSb-based lasers with Type-I heterointerfaces / D.V. Donetsky, R.U. Martinelli, and G.L. Belenky -- Advances in quantum-dot research and technology: the path to applications in biology / M.A. Stroscio and M. Dutta -- Potential device applications and basic properties. High-field electron transport controlled by optical phonon emission in nitrides / S.M. Komirenko ... [et al.] -- Cooling by inverse Nottingham effect with resonant tunneling / Y. Yu, R.F. Greene, and R. Tsu -- The physics of single electron transistors / M.A. Kastner -- Carrier capture and transport within tunnel injection lasers: a quantum transport analysis / L.F. Register ... [et al.] -- The influence of environmental effects on the acoustic phonon spectra in quantum-dot heterostructures / S. Rufo, M. Dutta, and M.A. Stroscio -- Quantum devices with multipole-electrode - heterojunctions hybrid structures / R. Tsu.

A rigorous guide providing a unified, multidisciplinary treatment of the fundamentals of optical and optoelectronic nanostructures.

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC''s (T Otsuji); The Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the “THz gap”.

The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the ?THz gap?.

This book provides the reader with a unique opportunity to understand the basic and applied research and technology areas that support applications to enable Transformational capabilities for US Soldiers. The research papers are in line with the theme of the 24th Army Science Conference: “Transformational Science and Technology for the Current and Future Force,” emphasizing the critical role of Science and Technology in addressing the significant challenges posed by Global War On Terrorism while simultaneously developing Transformational capabilities for the Future Force.

Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.

The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible.The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O.

This book explores the unique advantages and large inherent transmission capacity of optical fiber communication systems. The long-term and high-risk research challenges of optical transceivers are analyzed with a view to sustaining the seemingly insatiable demand for bandwidth. A broad coverage of topics relating to the design of high-speed optical devices and integrated circuits, oriented to low power, low cost, and small area, is discussed.Written by specialists with many years of research and engineering experience in the field of optical fiber communication, this book is essential for an audience dedicated to the development of integrated electronic systems for optical communication applications. It can also be used as a supplementary text for graduate courses on optical transceiver IC design.