The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

This book celebrates 20 years of MRS symposia on the topic of amorphous silicon. Contributors showed that the simplified theories developed to explain the limited experimental information available in the early eighties have spurred more sophisticated experimentation - either refining the early understanding or making it irrelevant. The differences of opinion that continue to exist and emerge are probably the hallmark of the amazing vitality of this field. Applications range from 'mature' thin-film transistors, solar cells and image sensors, to the 'emerging' possibility of erbium-doped nanocrystalline silicon-based materials for lasers and amorphous silicon quantum dots for luminescent devices. The book discusses material characterization, growth processes and devices. Each chapter is further subdivided into sections that group papers around common themes. Topics include: nanomaterials; electronic structure; metastable effects; understanding of growth processes; laser-induced crystallization; metal-induced crystallization; other growth techniques; newer devices; solar cells and thin-film transistors.

Members of the sensor community come together here to discuss advances in the development of new or improved semiconductor materials and in the fundamental understanding of the physical/chemical/biological phenomena at the origin of the sensing mechanism. Contributions dealing with sensor electronics/signal processing, computing algorithms, and packaging are not included in the volume. Chemical, magnetic, radiation, acoustic, mechanical, and biosensors are featured, as are nanosensors. Several papers highlight advances in combinatorial materials synthesis and theoretical modeling, and simulation of gas-solid interactions based on density functional theory. A combined application of sophisticated experimental and theoretical tools aimed at design and synthesis of novel sensors may have a lasting impact on general research approaches in the chemical sensor community. Presentations from a joint session with Symposium K, Solid-State Ionics, are also included and focus on solid electrolytes for membrane applications to develop selective sensors. Topics include: advanced materials and processing; nanotubes and nanowires; solid state ionics-based sensors; modeling, mechanism and structure-properties relationships; biochemical sensors; integration; and physical sensors.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.