Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

This volume features the latest research and practical data from the premier event for the microelectronics failure analysis community. The papers cover a wide range of testing and failure analysis topics of practical value to anyone working to detect, understand, and eliminate electronic device and system failures. Case histories and review papers are included, as well as guides to new and unique tools and methodologies, applications and results.

This issue covers topics related to the removal of contaminants from and conditioning of Si (SOI), SiC, Ge, SiGe, and III-V semiconductor surfaces; cleaning media, including non-aqueous cleaning methods and tools; front- and back-end cleaning operations; integrated cleaning; cleaning of MEMS; photomasks (reticles); porous low-k dielectrics; post-CMP cleaning; wafer bevel cleaning and polishing; characterization, evaluation, and monitoring of cleaning; correlation with device performance as well as cleaning of equipment and storage and handling hardware. The hardcover edition includes a bonus CD-ROM of Cleaning Technology in Semiconductor Device Manufacturing 1989?2007: Proceedings from the ECS Semiconductor Cleaning Symposia 1?10. This bonus material is not available with the PDF edition.

Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemical

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.