Energy-Filtering Transmission Electron Microscopy (EFTEM) presents a summary of the electron optics, the electron-specimen interactions, and the operation and contrast modes of this new field of analytical electron microscopy. The electron optics of filter lenses and the progress in the correction of aberrations are discussed in detail. An evaluation of our present knowledge of plasmon losses and inner-shell ionisations is of increasing interest for a quantitative application of EFTEM in materials and life sciences. This can be realized not only by filtering the elastically scattered electrons but mainly by imgaging and analyzing with inelastically scattered electrons at different energy losses up to 2000 eV. The strength of EFTEM is the combination of the modes EELS, ESI, ESD and REM.

The aim of this monograph is to outline the physics of image formation, electron–specimen interactions, and image interpretation in transmission el- tron microscopy. Since the last edition, transmission electron microscopy has undergone a rapid evolution. The introduction of monochromators and - proved energy ?lters has allowed electron energy-loss spectra with an energy resolution down to about 0.1 eV to be obtained, and aberration correctors are now available that push the point-to-point resolution limit down below 0.1 nm. After the untimely death of Ludwig Reimer, Dr. Koelsch from Springer- Verlag asked me if I would be willing to prepare a new edition of the book. As it had served me as a reference for more than 20 years, I agreed without hesitation. Distinct from more specialized books on speci?c topics and from books intended for classroom teaching, the Reimer book starts with the basic principles and gives a broad survey of the state-of-the-art methods, comp- mented by a list of references to allow the reader to ?nd further details in the literature. The main objective of this revised edition was therefore to include the new developments but leave the character of the book intact. The presentation of the material follows the format of the previous e- tion as outlined in the preface to that volume, which immediately follows. A few derivations have been modi?ed to correspond more closely to modern textbooks on quantum mechanics, scattering theory, or solid state physics.

Advances in Electronics and Electron Physics

The characterisation of materials and material systems is an essential aspect of materials science. A few decades ago it became obvious that, because the properties of materials depend so critically on the microstructure of their components, this characterisation must be determined to the atomic level. This means that the position - as well as the nature - of individual atoms has to be determined at "critical" regions close to defects such as dislocations, interfaces, and surfaces. The great impact of advanced transmission electron microscopy (TEM) techniques became apparent in the area of semiconducting materials, where the nature of internal interfaces between silicon and the corresponding silicides could be identified, and the results used to enhance the understanding of the properties of the compounds studied. At that time, advanced TEM techniques existed predominantly in the US. However, advanced TEM instrumentation was not available in the ma terials science and solid-state science communities in Germany. This gap was bridged by the late Peter Haasen who, after a visit to the US, initiated a Priority Programme on Microstructural Characterisation at the Volkswagen Foundation (Hannover). The programme was in effect from 1985 to 1997 and supported a wide range of research projects - from fundamental, trendy, innovative projects to projects in applied materials science.

This volume expands and updates the coverage in the authors' popular 1992 book, Electron Microdiffraction. As the title implies, the focus of the book has changed from electron microdiffraction and convergent beam electron diffraction to all forms of advanced transmission electron microscopy. Special attention is given to electron diffraction and imaging, including high-resolution TEM and STEM imaging, and the application of these methods to crystals, their defects, and nanostructures. The authoritative text summarizes and develops most of the useful knowledge which has been gained over the years from the study of the multiple electron scattering problem, the recent development of aberration correctors and their applications to materials structure characterization, as well as the authors' extensive teaching experience in these areas. Advanced Transmission Electron Microscopy: Imaging and Diffraction in Nanoscience is ideal for use as an advanced undergraduate or graduate level text in support of course materials in Materials Science, Physics or Chemistry departments.

This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key pitfalls to avoid. As with the previous TEM text, each chapter contains two sets of questions, one for self assessment and a second more suitable for homework assignments. Throughout the book, the style follows that of Williams & Carter even when the subject matter becomes challenging—the aim is always to make the topic understandable by first-year graduate students and others who are working in the field of Materials Science Topics covered include sources, in-situ experiments, electron diffraction, Digital Micrograph, waves and holography, focal-series reconstruction and direct methods, STEM and tomography, energy-filtered TEM (EFTEM) imaging, and spectrum imaging. The range and depth of material makes this companion volume essential reading for the budding microscopist and a key reference for practicing researchers using these and related techniques.

This work is based on experiences acquired by the authors regarding often asked questions and problems during manifold education of beginners in analytical transmission electron microscopy. These experiences are summarised illustratively in this textbook. Explanations based on simple models and hints for the practical work are the focal points. This practically- oriented textbook represents a clear and comprehensible introduction for all persons who want to use a transmission electron microscope in practice but who are not specially qualified electron microscopists up to now.

This profusely illustrated text on Transmission Electron Microscopy provides the necessary instructions for successful hands-on application of this versatile materials characterization technique. The new edition also includes an extensive collection of questions for the student, providing approximately 800 self-assessment questions and over 400 questions suitable for homework assignment.

Within the last 30 years, electron energy-loss spectroscopy (EELS) has become a standard analytical technique used in the transmission electron microscope to extract chemical and structural information down to the atomic level. In two previous editions, Electron Energy-Loss Spectroscopy in the Electron Microscope has become the standard reference guide to the instrumentation, physics and procedures involved, and the kind of results obtainable. Within the last few years, the commercial availability of lens-aberration correctors and electron-beam monochromators has further increased the spatial and energy resolution of EELS. This thoroughly updated and revised Third Edition incorporates these new developments, as well as advances in electron-scattering theory, spectral and image processing, and recent applications in fields such as nanotechnology. The appendices now contain a listing of inelastic mean free paths and a description of more than 20 MATLAB programs for calculating EELS data.