A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.

Front cover -- Titelseite -- Impressum -- Acknowledgments -- Contents -- List of Abbreviations and Acronyms -- Abstract -- Zusammenfassung -- Chapter 1 Introduction -- 1.1 Principle of the Partitioning Design Approach -- 1.2 Dissertation Organization -- Chapter 2 Investigation of Planar-Interconnection -- 2.1 Active Chip Device Interconnection -- 2.1.1 Die Attach -- 2.1.2 Wire Bonding Pad-To-Microstrip -- 2.2 Microstrip-to-Microstrip Interconnection -- 2.2.1 Soldering -- 2.2.2 Multi-Wire Bonding -- 2.2.3 Copper Ribbon -- 2.2.4 Silver- Painting -- Chapter 3 Analysis and Modeling of Passive SMD Components -- 3.1 SMD Resistor -- 3.2 SMD Capacitor -- 3.3 SMD Inductor -- Chapter 4 Modeling of AlGaAs/GaAs HEMT Chip Device -- 4.1 AIGaAs/GaGa HEMT Chip -- 4.2 Modeling Approach Overview -- 4.3 Small-Signal Modeling -- 4.3.1 Extrinsic Parameter Extraction -- 4.3.2 Intrinsic Parameter Extraction -- 4.4 Large-Signal Modeling -- 4.4.1 Gate Current and Charge Models -- 4.4.2 Drain Current Model -- 4.4.3 Model Verification -- Chapter 5 Demonstrator Design of a Class-AB Power Amplifier Following -- 5.1 Micro-Packaged Device Characterization -- 5.1.1 Small-Signal Performance -- 5.1.2 Large-Signal Performance -- 5.2 Bias Network Design -- 5.2.1 Drain Bias Network -- 5.2.2 Gate Bias Network -- 5.3 Matching Network Design -- 5.3.1 Matching Impedance Determination -- 5.4 Power Amplifier Performance Evaluation -- 5.4.1 Small-Signal Performance -- 5.4.2 Large-Signal Performance -- Chapter 6 Conclusions and Outlook -- Appendix -- Appendix A THLR In-Fixture Calibration -- Appendix B Precise Determination of Substrate Permittivity -- Appendix C Schematic Circuit of the Designed Power Amplifier Demonstrator -- Appendix D Power Amplifier Design Following the Conventional Design Approach -- References -- Back cover

This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

This book explains and demonstrates with an exhaustive set of design examples, how common types of radio frequency(RF) amplifiers (classes A, B, AB, C, D, E, F, G and H) can be designed, and then have their performance characteristics evaluated and optimized with SPICE. The author demonstrates the transient analysis features of SPICE, along with industry-standard load- and source-pull techniques to simulate the steady-state, long-term time-domain behavior of any test RF amplifier.· Describes methods for designing and evaluating/optimizing the performance characteristics of an RF amplifier that circumvent the issues involved with existing, traditional methods and don’t require expensive, high-end software tools;· Includes C language executables for each RF amplifier type, eliminating errors that might creep in while computing passive component (capacitor, inductor, resistor) values for a given RF amplifier type;· Demonstrates industry-standard load- and source-pull schemes that can be included easily in text SPICE netlists, allowing accurate calculation of impedance matching and impedance values at the input and output ports of the test RF amplifier, eliminating messy, error-prone S parameter based calculations.

Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material. The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like: An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.

To design and develop fast and effective microwave wireless systems today involves addressing the three different 'levels': Device, circuit, and system. This book presents the links and interactions between the three different levels rather than providing just a comprehensive coverage of one specific level. With the aim of overcoming the sectional knowledge of microwave engineers, this will be the first book focused on explaining how the three different levels interact by taking the reader on a journey through the different levels going from the theoretical background to the practical applications. - Explains the links and interactions between the three different design levels of wireless communication transmitters: device, circuit, and system - Presents state-of-the-art, challenges, and future trends in the field of wireless communication systems - Covers all aspects of both mature and cutting-edge technologies for semiconductor devices for wireless communication applications - Many circuit designs outlining the limitations derived from the available transistor technologies and system requirements - Explains how new microwave measurement techniques can represent an essential tool for microwave modellers and designers

This book provides comprehensive knowledge, aimed at practicing integrated circuit design engineer or researcher, to learn and design a low noise amplifier (LNA) for single and multiband applications. The content is structured in a way so that even a beginner can follow the design method easily. This book features the following characteristics: different types of LNA designs (with key building blocks) are discussed, and detailed analysis is given for each LNA design, which covers from the fundamental and principal knowledge to the justification of the design approach. Detailed design approaches are using 180 nm and 130nm CMOS technologies, purposely presented in this manner to give exposure to the design of LNA under different technologies. The LNAs in this book are designed for GSM, WCDMA and WLAN standards, but the same method can be used for other frequencies of operation. Comprehensive analyses on the extreme or corner condition effects are highlighted. Besides, detailed derivation of equations relating to the parameters of the LNA’s performance metrics help LNA designers in understanding how the performance metrics of the LNA can be optimized to meet the desired specification. Electromagnetic analyses using Sonnet, an electromagnetic tool able to replace the conventional post-layout simulation with resistance and capacitance parasitic extraction for more accurate frequency performance prediction are presented. The electromagnetic method is proposed to be used in the LNA design as it can accurately predict the LNA’s performance before tape-out for first-pass fabrication. MATLAB codes are provided to generate important S-parameters and noise figure values.

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Microwave/RF Applicators and Probes for Material Heating, Sensing, and Plasma Generation, Second Edition, encompasses the area of high-frequency applicators and probes for material interactions as an integrated science. Based on practical experience rather than entirely on theoretical concepts, and emphasizing phenomenological explanations and well-annotated figures, the book represents one of the most important resources on the topics of microwave technologies, applications of RF and microwaves in industry (industrial heating and drying), and microwave engineering. After covering the basics of field-material interactions, the book reviews and categorizes probes and applicators, demonstrates their real-world applications, and offers numerically solved examples. Readers will find valuable design rules and principles of high-frequency applicators and probes for material processing and sensing applications in this expanded edition. - Presents new information on how the interactions of electromagnetic fields with materials at high frequencies have given rise to a vast array of practical applications in industry, science, medicine, and consumer markets - Thoroughly revised and expanded edition, providing an update on the most recent trends and findings - Contains many new sections within existing chapters, along with new chapters on applicators for plasmas at microwave/RF frequencies

Build high-performance, spectrally clean, energy-efficient mm-wave power amplifiers and transmitters with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems. Suitable for students, researchers and practicing engineers, this self-contained guide provides in-depth coverage of state-of-the-art semiconductor devices and technologies, linear and nonlinear power amplifier technologies, efficient power combining systems, circuit concepts, system architectures and system-on-a-chip realizations. The world's foremost experts from industry and academia cover all aspects of the design process, from device technologies to system architectures. Accompanied by numerous case studies highlighting practical design techniques, tradeoffs and pitfalls, this is a superb resource for those working with high-frequency systems.