This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Fifty papers from the December 1997 symposium which covered the application of electrical measurements for the detection of microstructural features at all length scales. In addition to the topics covered in the first symposium--dc and ad resistivity measurements, impedance/admittance analysis, multiplane analysis and various other methods such as electron energy loss spectroscopy, ellipsometry, and capacitance voltage measurements--there are several papers which combine electrical measurements with STM, AFM, NSOM and electroluminescence techniques so that more localized information may be obtainable. Annotation copyrighted by Book News, Inc., Portland, OR

This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

The proliferation of lasers and systems employing lasers has brought with it the potential for adverse effects from these bright, coherent light sources. This includes the possibility of damage from pulsed lasers, as well as temporary blinding by continuous-waver lasers. With nearly every wavelength possible being emitted by these sources, there exists a need to develop optical limiters and tunable filters which can suppress undesired radiation of any wavelength. This book addresses a number of materials and devices which have the potential for meeting the challenge. The proceedings is divided into five parts. Parts I and II cover research in organic and inorganic materials primarily based on nonlinear absorption or phase transitions for optical limiting of pulsed lasers. Part III includes photo-refractive materials and liquid crystals which find primary applications in dynamic filters. Part IV covers various aspects of device and material characterization, including nonlinear beam propagation effects. Theoretical modelling of materials properties is the subject of Part V.

The focus of semiconductor wafer processing is rapidly changing. Pure device performance is no longer sufficient to ensure a technology's success as IC chips approach 1GB. Yield, reliability, cost and manufacturability are principal drivers of the industry. Great strides have been made in understanding the science and impact of front-end (pre-metal) chemical surface preparations and are beginning to influence the 'real' technology and its evolution. Efforts in understanding particle and metals removal, along with Si surface etching and microroughness are prime examples of areas where work is beginning to pay off together with processes related to the back-end (post-metal). The focus of this book is to report new findings and to discuss surface preparation with an emphasis on gaining a mechanistic understanding of the underlying science upon which the technology is based. Topics include: megasonic cleaning; SC1 technology; surface preparation and gate oxide reliability; CMP/CMP cleaning; post-etch processing; surface microroughness; wet chemical cleaning and gate oxide integrity; analytical studies of surfaces; wet chemical cleaning/etching; dry wafer cleaning; and environmentally friendly processing.