Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay

Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: - Silicon as MEMS material - Material properties and measurement techniques - Analytical methods used in materials characterization - Modeling in MEMS - Measuring MEMS - Micromachining technologies in MEMS - Encapsulation of MEMS components - Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. - Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. - Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. - Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. - Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures

.".. ALTECH 2003 was Symposium J1 held at the 203rd Meeting of the Electrochemical Society in Paris, France from April 27 to May 2, 2003 ... Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices, was part of the 202nd Meeting of the Electrochemical Society held in Salt Lake City, Utah, from October 21 to 25, 2002 ..."--p. iii.

The second Edition of the Handbook of Silicon Wafer Cleaning Technology is intended to provide knowledge of wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits. The integration of the clean processes into the device manufacturing flow will be presented with respect to other manufacturing steps such as thermal, implant, etching, and photolithography processes. The Handbook discusses both wet and plasma-based cleaning technologies that are used for removing contamination, particles, residue, and photoresist from wafer surfaces. Both the process and the equipment are covered. A review of the current cleaning technologies is included. Also, advanced cleaning technologies that are under investigation for next generation processing are covered; including supercritical fluid, laser, and cryoaerosol cleaning techniques. Additionally theoretical aspects of the cleaning technologies and how these processes affect the wafer is discussed such as device damage and surface roughening will be discussed. The analysis of the wafers surface is outlined. A discussion of the new materials and the changes required for the surface conditioning process used for manufacturing is also included. - Focused on silicon wafer cleaning techniques including wet, plasma, and other surface conditioning techniques used to manufacture integrated circuits - As this book covers the major technologies for removing contaminants, it is a reliable reference for anyone that manufactures integrated circuits, or supplies the semiconductor and microelectronics industries - Covers processes and equipment, as well as new materials and changes required for the surface conditioning process - Editors are two of the top names in the field and are both extensively published - Discusses next generation processing techniques including supercritical fluid, laser, and cryoaerosol

Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading for materials scientists, semiconductor physicists, and those working in the semiconductor industry, as well as IT and electrical engineers.

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

The completely revised Third Edition to the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from fundamental principles to advanced topics of nanoscale lithography. The book is divided into chapters covering all important aspects related to the imaging, materials, and processes that have been necessary to drive semiconductor lithography toward nanometer-scale generations. Renowned experts from the world’s leading academic and industrial organizations have provided in-depth coverage of the technologies involved in optical, deep-ultraviolet (DUV), immersion, multiple patterning, extreme ultraviolet (EUV), maskless, nanoimprint, and directed self-assembly lithography, together with comprehensive descriptions of the advanced materials and processes involved. New in the Third Edition In addition to the full revision of existing chapters, this new Third Edition features coverage of the technologies that have emerged over the past several years, including multiple patterning lithography, design for manufacturing, design process technology co-optimization, maskless lithography, and directed self-assembly. New advances in lithography modeling are covered as well as fully updated information detailing the new technologies, systems, materials, and processes for optical UV, DUV, immersion, and EUV lithography. The Third Edition of Microlithography: Science and Technology authoritatively covers the science and engineering involved in the latest generations of microlithography and looks ahead to the future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current technology, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to better understand the complex world of microlithography science and technology.

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Compiled by 330 of the most widely respected names in the electro-optical sciences, the Encyclopedia is destined to serve as the premiere guide in the field with nearly 2000 figures, 560 photographs, 260 tables, and 3800 equations. From astronomy to x-ray optics, this reference contains more than 230 vivid entries examining the most intriguing technological advances and perspectives from distinguished professionals around the globe. The contributors have selected topics of utmost importance in areas including digital image enhancement, biological modeling, biomedical spectroscopy, and ocean optics, providing thorough coverage of recent applications in this continually expanding field.