This textbook lays out the fundamentals of electronic materials and devices on a level that is accessible to undergraduate engineering students with no prior coursework in electromagnetism and modern physics. The initial chapters present the basic concepts of waves and quantum mechanics, emphasizing the underlying physical concepts behind the properties of materials and the basic principles of device operation. Subsequent chapters focus on the fundamentals of electrons in materials, covering basic physical properties and conduction mechanisms in semiconductors and their use in diodes, transistors, and integrated circuits. The book also deals with a broader range of modern topics, including magnetic, spintronic, and superconducting materials and devices, optoelectronic and photonic devices, as well as the light emitting diode, solar cells, and various types of lasers. The last chapter presents a variety of materials with specific novel applications, such as dielectric materials used in electronics and photonics, liquid crystals, and organic conductors used in video displays, and superconducting devices for quantum computing. Clearly written with compelling illustrations and chapter-end problems, Rezende’s Introduction to Electronic Materials and Devices is the ideal accompaniment to any undergraduate program in electrical and computer engineering. Adjacent students specializing in physics or materials science will also benefit from the timely and extensive discussion of the advanced devices, materials, and applications that round out this engaging and approachable textbook.

This book provides the knowledge and understanding necessary to comprehend the operation of individual electronic devices that are found in modern micro-electronics. As a textbook, it is aimed at the third-year undergraduate curriculum in electrical engineering, in which the physical electronic properties are used to develop an introductory understanding to the semiconductor devices used in modern micro-electronics. The emphasis of the book is on providing detailed physical insight into the microscopic mechanisms that form the cornerstone for these technologies. Mathematical treatments are therefore kept to the minimum level necessary to achieve suitable rigor. * Covers crystalline structure * Thorough introduction to the key principles of quantum mechanics * Semiconductor statistics, impurities, and controlled doping * Detailed analysis of the operation of semiconductor devices, including p-n junctions, field-effect transistors, metal-semiconductor junctions and bipolar junction transistors * Discussion of optoelectronic devices such as light-emitting diodes (LEDs) and lasers * Chapters on the device applications of dielectrics, magnetic materials, and superconductors

The Romans built enduring bridges well before Newton came along, armed simply with a working knowledge of mechanics and materials. In contrast, today's bridge building is an elaborate enterprise involving CAD tools, composite materials and acoustic imaging. When technology is pushed to its limits, a working knowledge proves inadequate, and an in-depth understanding of core physical principles, both macroscopic and microscopic, top-down vs bottom-up, becomes essential.We find ourselves today at a similar crossroad in semiconductor device technology, where a working knowledge of solid state electronics is no longer enough. Faced with the prohibitive cost of computing and the slowdown of chip manufacturing, device scaling and the global supply chain, the semiconductor industry is forced to explore alternate platforms such as 2-D materials, spintronics, analog processing and quantum engineering.This book combines top-down classical device physics with bottom-up quantum transport in a single venue to provide the basis for such a scientific exploration. It is essential, easy reading for beginning undergraduate and practicing graduate students, physicists unfamiliar with device engineering and engineers untrained in quantum physics. With just a modest pre-requisite of freshman maths, the book works quickly through key concepts in quantum physics, Matlab exercises and original homeworks, to cover a wide range of topics from chemical bonding to Hofstader butterflies, domain walls to Chern insulators, solar cells to photodiodes, FinFETs to Majorana fermions. For the practicing device engineer, it provides new concepts such as the quantum of resistance, while for the practicing quantum physicist, it provides new contexts such as the tunnel transistor.

With information on the subject of dielectric materials, this volume brings important updates to electronic device engineers and researchers in the area of ferroelectric materials. Topics include materials, processes, properties, and electronic devices based on these materials and systems. Proceedings of the symposium held at the 103rd Annual Meeting of The American Ceramic Society, April 22-25, 2001, in Indiana; Ceramic Transactions, Volume 131.

Think like an electron Organic electronic materials have many applications and potential in low-cost electronics such as electronic barcodes and in light emitting devices, due to their easily tailored properties. While the chemical aspects and characterization have been widely studied, characterization of the electrical properties has been neglected, and classic textbook modeling has been applied. This is most striking in the analysis of thin-film transistors (TFTs) using thick “bulk” transistor (MOS-FET) descriptions. At first glance the TFTs appear to behave as regular MOS-FETs. However, upon closer examination it is clear that TFTs are unique and merit their own model. Understanding and interpreting measurements of organic devices, which are often seen as black-box measurements, is critical to developing better devices and this, therefore, has to be done with care. Electrical Characterization of Organic Electronic Materials and Devices Gives new insights into the electronic properties and measurement techniques for low-mobility electronic devices Characterizes the thin-film transistor using its own model Links the phenomena seen in different device structures and different measurement techniques Presents clearly both how to perform electrical measurements of organic and low-mobility materials and how to extract important information from these measurements Provides a much-needed theoretical foundation for organic electronics

Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites

The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices. The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made. The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years. However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data. Chapter 1 is an introduction to the market study. Chapter 2 contains an executive summary. Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application. Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described. The application data are presented for the following industrial groups: • Automotive • Computers • Consumer • Industrial • Military and Aerospace • Telecommunications • Others A full 5-year forecast and analysis is provided by application and region. Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices. This process is crystal growth and involves the following sequence: • Bulk growth of single crystals • Epitaxial growth of semiconductor single crystal layers • Ion implantation • Device fabrication, ie gate and contact formation, etc • Packaging & test Chapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices. Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research. Chapter 8 is a directory of suppliers. Chapter 9 provides acronyms and exchange rates.