This issue of ECS Transactions features eight invited and sixty-seven regular papers on technology, devices, systems, optoelectronics, modeling and characterization; all either directly or indirectly related to microelectronics. The topics presented herein reveal the multidisciplinary character of this field, which definitely incites the highly cooperative trace of human nature.

Held in Sao Paulo, Brazil, from September 6 - September 9, 2010, the mission of the 25th Symposium on Microelectronics Technology and Devices ¿ SBMicro2010 was to share ideas and to point to new directions for future research and development. SBMicro offers researchers and practitioners a unique opportunity to share their perspectives with those interested in the various aspects of microelectronics. This issue of ECS Transactions continues the SBMicro tradition of being a premier forum for the presentation of leading edge research on process, devices, sensors and integrated circuit technology.

The SBMicro symposium is a forum dedicated to fabrication and modeling of Microsystems, integrated circuits and devices. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators, and MEMS. This issue contains the papers presented at the 2007 conference.

The SBMicro symposium is a forum dedicated to fabrication and modeling of microsystems, integrated circuits and devices. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators and MEMS. This issue of ECS Transactions contains the papers presented at the 2008 conference.

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.