This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

This book is a summary of a series of achievements made by the authors and colleagues in the areas of radio frequency power amplifier modeling (including neural Volterra series modeling, neural network modeling, X-parameter modeling), nonlinear analysis methods, and power amplifier predistortion technology over the past 10 years. The book is organized into ten chapters, which respectively describe an overview of research of power amplifier behavioral models and predistortion technology, nonlinear characteristics of power amplifiers, power amplifier behavioral models and the basis of nonlinear analysis, an overview of power amplifier predistortion, Volterra series modeling of power amplifiers, power amplifier modeling based on neural networks, power amplifier modeling with X-parameters, the modeling of other power amplifiers, nonlinear circuit analysis methods, and predistortion algorithms and applications. Blending theory with analysis, this book will provide researchers and RF/microwave engineering students with a valuable resource.

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.

A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: - The theoretical background of high-frequency de-embedding for measurements, modelling, and design - Details on applying the de-embedding concept to the transistor's linear, non-linear, and noise behaviour - The impact of de-embedding on low-noise and power amplifier design - The recent advances and future trends in the field of high-frequency de-embedding - Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends - Written by experts in the field, all of whom are leading researchers in the area - Each chapter describes theoretical background and gives experimental results and practical applications - Includes forewords by Giovanni Ghione and Stephen Maas

The five volume set LNCS 7663, LNCS 7664, LNCS 7665, LNCS 7666 and LNCS 7667 constitutes the proceedings of the 19th International Conference on Neural Information Processing, ICONIP 2012, held in Doha, Qatar, in November 2012. The 423 regular session papers presented were carefully reviewed and selected from numerous submissions. These papers cover all major topics of theoretical research, empirical study and applications of neural information processing research. The 5 volumes represent 5 topical sections containing articles on theoretical analysis, neural modeling, algorithms, applications, as well as simulation and synthesis.

Featuring numerous examples linking theoretical concepts with real-world applications, this practical, cross-disciplinary guide will help you understand the fundamentals of radio frequency measurement of nanoscale devices. -- Résumé abrégé du livre.

This book presents cutting-edge work on real-time modelling and processing, a highly active research field in both the research and industrial domains. Going beyond conventional real-time systems, major efforts are required to develop accurate and computational efficient real-time modelling algorithms and design automation tools that reflect the technological advances in high-speed and ultra-low-power transceiver communication architectures based on nanoscale devices. The book addresses basic and more advanced topics, such as I/O buffer circuits for ensuring reliable chip-to-chip communication, I/O buffer behavioural modelling, multiport empirical models for memory interfaces, compact behavioural modelling for memristive devices, and resource reservation modelling for distributed embedded systems. The respective chapters detail new research findings, new models, algorithms, implementations and simulations of the above-mentioned topics. As such, the book will help both graduate students and researchers understand the latest research into real-time modelling and processing.