This book represents recent progress and development of the photodiodes including the fundamental reviews and the specific applications developed by the authors themselves. The key idea of this book is that it allows authors to deal with a wide range of backgrounds and research progresses in photodiode-related areas. With respect to the original collection of the book chapters, this book contains several improvements and new problems and related solutions are also discussed in the areas from fundamental physics and design to device and circuit applications. The book is intended for graduate students, engineers, and researchers who are especially interested in the area of optoelectronic device applications, including photodiodes, solar cells, CMOS image sensors, Optoelectronic Integrated Circuits, etc.

This book describes different kinds of photodiodes for applications in high-speed data communication, biomedical sensing, high-speed measurement, UV-light detection, and high energy physics. The photodiodes discussed are composed of several different semiconductor materials, such as InP, SiC, and Si, which cover an extremely wide optical wavelength regime ranging from infrared light to X-ray, making the suitable for diversified applications. Several interesting and unique topics were discussed including: the operation of high-speed photodiodes at low-temperature for super-conducting electronics, photodiodes for bio-medical imaging, single photon detection, photodiodes for the applications in nuclear physics, and for UV-light detection.

In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.

High-speed Photodiodes in Standard CMOS Technology describes high-speed photodiodes in standard CMOS technology which allow monolithic integration of optical receivers for short-haul communication. For short haul communication the cost aspect is important , and therefore it is desirable that the optical receiver can be integrated in the same CMOS technology as the rest of the system. If this is possible then ultimately a singe-chip system including optical inputs becomes feasible, eliminating EMC and crosstalk problems, while data rate can be extremely high. The problem of photodiodes in standard CMOS technology it that they have very limited bandwidth, allowing data rates up to only 50Mbit per second. High-speed Photodiodes in Standard CMOS Technology first analyzes the photodiode behaviour and compares existing solutions to enhance the speed. After this, the book introduces a new and robust electronic equalizer technique that makes data rates of 3Gb/s possible, without changing the manufacturing technology. The application of this technique can be found in short haul fibre communication, optical printed circuit boards, but also photodiodes for laser disks.

Photodiodes, the simplest but most versatile optoelectronic devices, are currently used in a variety of applications, including vision systems, optical interconnects, optical storage systems, photometry, particle physics, medical imaging, etc. Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the field, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. Written by internationally renowned experts, with contributions from universities, research institutes and industries, the book is a valuable reference tool for students, scientists, engineers, and researchers.

Light photons impinging upon a semiconductor material in the vicinity of a P-N junction release conduction carriers to produce current flow through the photodiode effect. Photodiode amplifiers convert this current to a voltage in a relationship that remains linear as long as the amplifier eliminates signal voltage swing from the photodiode. For this purpose, the simple current-to-voltage converter or transimpedance amplifier presents a virtual ground to the diode. However, when connected to a photodiode, this simple op amp circuit displays surprising multidimensional constraints that defy conventional op amp intuition.

This book provides readers with state-of-the-art knowledge of established and emerging semiconducting materials, their processing, and the fabrication of chips and microprocessors. In addition to covering the fundamentals of these materials, it details the basics and workings of many semiconducting devices and their role in modern electronics and explores emerging semiconductors and their importance in future devices. • Provides readers with latest advances in semiconductors. • Covers diodes, transistors, and other devices using semiconducting materials. • Covers advances and challenges in semiconductors and their technological applications. • Discusses fundamentals and characteristics of emerging semiconductors for chip manufacturing. This book provides directions to scientists, engineers, and researchers in materials engineering and related disciplines to help them better understand the physics, characteristics, and applications of modern semiconductors.

Semiconductors and Semimetals

InGaAs Avalanche Photodiodes for Ranging and Lidar discusses the materials, physics, and design considerations of avalanche photodiodes (APDs) developed for 3D imaging sensors, which will enable self-driving cars and autonomously navigating drones. The book provides a detailed theoretical understanding of all types of APD, including the semiconductor physics underlying device function and the mathematics of avalanche noise. Both linear- and Geiger-mode operation of APDs are addressed, and contemporary research on APDs manufactured from a variety of different material systems is reviewed. The approach unites a theoretical treatment of common figures of merit with a practical discussion of how they impact sensor system performance. Models are developed for the sensitivity, maximum effective range, and ranging precision of time-of-flight APD photoreceiver circuits. Linear-mode InGaAs APDs are of particular relevance to 3D imaging owing to their compatibility with eye-safe lasers, and the maturity of the material system, for which substantial commercial foundry capacity exists. The author uses InGaAs APDs to demonstrate the book's design calculations, which are compared to the representative empirical data, and as the basis for discussions of device structure and manufacturing. r - Addresses the materials, device and system design challenges that face researchers today, presenting all the information in one key resource - Reviews all key APD figures of merit and explains the connection between device and system performance - Written by an industry expert with 13 years of experience developing InAlAs, InGaAs and InP avalanche photodiodes (APDs)