Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

This volume investigates the theory of the effect of static electric fields on one-electron states in. nanocylindrical and nanospherical heterolayers and quantized semiconductor films. Homogeneous external electrostatic field for all these structures has been considered as a "universal" modulating factor. For structures with radial symmetry, a study on the influence of radial static field and the electric field of a charged ring on one-electron states is presented. Chapters focusing on homogeneous field effect on low-dimensional excitonic states in the quantized films and quantum wires - in both wide bandgap and narrowband semiconductors - are also included. Other contents include calculations weak, moderate and strong electric fields, quantum-mechanical approximation and perturbation theory, the quasi-classical approximation (WKB method). Readers will benefit from the varied methodological to the subject which gives them a concrete analytical framework to solve problems related to nanoscale semiconductor design. The reference should prove to be useful to academics and professionals working in semiconductor nanoelectronics research and development.

The recent shift in focus from defense and government work to commercial wireless efforts has caused the job of the typical microwave engineer to change dramatically. The modern microwave and RF engineer is expected to know customer expectations, market trends, manufacturing technologies, and factory models to a degree that is unprecedented in the

By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), as well as an overview of microwave engineering. Over 100 contributors, with diverse backgrounds in academic, industrial, government, manufacturing, design, and research reflect the breadth and depth of the field. This eclectic mix of contributors ensures that the coverage balances fundamental technical issues with the important business and marketing constraints that define commercial RF and microwave engineering. Focused chapters filled with formulas, charts, graphs, diagrams, and tables make the information easy to locate and apply to practical cases. The new format, three tightly focused volumes, provides not only increased information but also ease of use. You can find the information you need quickly, without wading through material you don’t immediately need, giving you access to the caliber of data you have come to expect in a much more user-friendly format.

Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.

This issue of ECS Transactions focuses on issues pertinent to materials growth, characterization, processing, development, application of compound semiconductor materials and devices, including nitrides and wide-bandgap semiconductors.