After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. - The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field

This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.

Chalcogenide glass is made up of many elements from the Chalcogenide group. The glass is transparent to infrared light and is useful as a semiconductor in many electronic devices. For example, chalcogenide glass fibers are a component of devices used to perform laser surgery. The properties of chalcogenide glass result not only from their chemical composition and atomic structure, but also from the impact of numerous external factors. A comprehensive survey is presented of the properties of chalcogenide glass under various external impacts. Practical recommendations are presented for a wide range of applications. Part II is the second part of a three-volume work within the Semiconductors and Semimetals series.* The first collective monograph written by Eastern European scientists on the electrical and optical properties of chalcogenide vitreous semiconductors (CVS).* Contributions by B.G. Kolomiets, who discovered the properties of chalcogenide glass in 1955!* Provides objective evidence and discussion by authors from opposing positions.

Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. - Includes experts contributors who review the most important recent literature - Contains a broad view, including examination of semiconductor nanowires

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Advances in Photovoltaics: Part Four provides valuable information on the challenges faced during the transformation of our energy supply system to more efficient, renewable energies. The volume discusses the topic from a global perspective, presenting the latest information on photovoltaics, a cornerstone technology. It covers all aspects of this important semiconductor technology, reflecting on the tremendous and dynamic advances that have been made on this topic since 1975, when the first book on solar cells—written by Harold J. Hovel of IBM—was published as volume 11 in the now famous series on Semiconductors and Semimetals. Readers will gain a behind the scenes look at the continuous and rapid scientific development that leads to the necessary price and cost reductions in global industrial mass-production. - Written by leading, internationally known experts on his topic - Provides an in-depth overview of the current status and perspectives of thin film PV technologies - Discusses the challenges faced during the transformation of our energy supply system to more efficient, renewable energies - Delves deep into photovoltaics, a cornerstone technolog

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. - Contains comments from leading contributors in the field semiconductor nanowires - Provides reviews of the most important recent literature - Presents a broad view, including an examination of semiconductor nanowires - Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book