An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

This book will appeal to scientists and engineers who are concerned with the design of microwave wideband devices and systems. For advanced (ultra)-wideband wireless systems, the necessity and design methodology of wideband filters will be discussed with reference to the inherent limitation in fractional bandwidth of classical bandpass filters. Besides the detailed working principles, a large number of design examples are demonstrated, which can be easily followed and modified by the readers to achieve their own desired specifications. Therefore, this book is of interest not only to students and researchers from academia, but also to design engineers in industry. With the help of complete design procedures and tabulated design parameters, even those with little filter design experience, will find this book to be a useful design guideline and reference, which can free them from tedious computer-aided full-wave electromagnetic simulations. Among different design proposals, wideband bandpass filters based on the multi-mode resonator have demonstrated many unparalleled attractive features, including a simple design methodology, compact size, low loss and good linearity in the wide passband, enhanced out-of-band rejection, and easy integration with other circuits/antennas. A conventional bandpass filter works under single dominant resonant modes of a few cascaded transmission line resonators and its operating bandwidth is widened via enhanced coupling between the adjacent resonators. However, this traditional approach needs an extremely high coupling degree of coupled-lines while producing a narrow upper stopband between the dominant and harmonic bands. As a sequence, the desired dominant passband is restricted to an extent less than 60% in fractional bandwidth. To circumvent these issues and break with the tradition, a filter based on the multiple resonant modes was initially introduced in 2000 by the first author of this book. Based on this novel concept, a new class of wideband filters with fractional bandwidths larger than 60% has been successfully developed so far. This book, presents and characterizes a variety of multi-mode resonators with stepped-impedance or loaded-stub configurations using the matured transmission line theory for development of advanced microwave wideband filters.

Radio Propagation and Adaptive Antennas for Wireless Communication Networks, 2nd Edition, presents a comprehensive overview of wireless communication system design, including the latest updates to considerations of over-the-terrain, atmospheric, and ionospheric communication channels. New features include the latest experimentally-verified stochastic approach, based on several multi-parametric models; all-new chapters on wireless network fundamentals, advanced technologies, and current and modern multiple access networks; and helpful problem sets at the conclusion of each chapter to enhance clarity. The volume’s emphasis remains on a thorough examination of the role of obstructions on the corresponding propagation phenomena that influence the transmission of radio signals through line-of-sight (LOS) and non-line-of-sight (NLOS) propagation conditions along the radio path between the transmitter and the receiver antennas—and how adaptive antennas, used at the link terminals, can be used to minimize the deleterious effects of such obstructions. With its focus on 3G, 4G, MIMO, and the latest wireless technologies, Radio Propagation and Adaptive Antennas for Wireless Communication Networks represents an invaluable resource to topics critical to the design of contemporary wireless communication systems. Explores novel wireless networks beyond 3G, and advanced 4G technologies, such as MIMO, via propagation phenomena and the fundamentals of adapted antenna usage. Explains how adaptive antennas can improve GoS and QoS for any wireless channel, with specific examples and applications in land, aircraft and satellite communications. Introduces new stochastic approach based on several multi-parametric models describing various terrestrial scenarios, which have been experimentally verified in different environmental conditions New chapters on fundamentals of wireless networks, cellular and non-cellular, multiple access networks, new applications of adaptive antennas for positioning, and localization of subscribers Includes the addition of problem sets at the end of chapters describing fundamental aspects of wireless communication and antennas.

A one-stop reference to the major techniques for analyzing microwave planar transmission line structures The last two decades have seen important progress in the development of methods for the analysis of microwave and millimeter-wave passive structures, which contributed greatly to microwave integrated circuit design while also stimulating the development of new planar transmission lines. This timely and authoritative work introduces microwave engineers to the most commonly used techniques for analyzing microwave planar transmission line structures. Designed to be easily accessible to readers with only a fundamental background in electromagnetic theory, the book provides clear explanations of the theory and applications of Green's function, the conformal-mapping method, spectral domain methods, variational methods, and the mode-matching methods. Coverage for each method is self-contained and supplemented with problems and solutions as well as useful figures. In addition to providing detailed formulations of the methods under discussion, this highly practical book also demonstrates how to apply the principles of electromagnetic theory to the analysis of microwave boundary value problems, customize methods for specific needs, and develop new techniques. Analysis Methods for RF, Microwave, and Millimeter-Wave Planar Transmission Line Structures is an excellent working resource for anyone involved in the design and engineering of RF, microwave, and millimeter-wave integrated circuits.