Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.

This collection of selected review papers focuses on topics such as digital radiation sensors and nanosensory systems for nanotechnology applications and integrated X-ray/PET/CT detectors; nanophosphors and nanocrystal quantum dots as X-ray radiation sensors; the luminescence efficiency of CdSe/ZnS QD and UV-induced luminescence efficiency distribution; investigations devoted to the quantum and multi-parametrical nature of disasters and the modeling thereof using quantum search and quantum query algorithms; sum-frequency-generation, IR fourier and raman spectroscopy methods; as well as investigations into the vibrational modes of viruses and other pathogenic microorganisms aimed at creating optical biosensory systems. This is followed by a review of radiation resistant semiconductor sensors and magnetic measurement instrumentation for magnetic diagnostics of high-tech fission and fusion set-ups and accelerators; the evaluation of the use of neutron-radiation, 10B-enriched semiconducting materials as thin-film, highly reliable, highly sensitive and fast-acting robust solid-state electronic neutron-detectors; and the irradiation of n-Si crystals with protons, which converts the “metallic” inclusions to “dielectric” ones in isochronous annealing, therefore leading to opto/micro/nanoelectronic devices, including nuclear radiation nanosensors. The book concludes with a comparative study of the nitride and sulfide chemisorbed layers; a chemical model that describes the formation of such layers in hydrazine-sulfide and water sodium sulfide solution; and recent developments in the microwave-enhanced processing and microwave-assisted synthesis of nanoparticles and nanomaterials using Mn(OH)2.

This issue contains invited and contributed talks on the growth, processing, and characterization of electronic and photonic devices based upon compound semiconductor and oxide materials.

This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.