Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

An Essential Guide to Electronic Material Surfaces and Interfaces is a streamlined yet comprehensive introduction that covers the basic physical properties of electronic materials, the experimental techniques used to measure them, and the theoretical methods used to understand, predict, and design them. Starting with the fundamental electronic properties of semiconductors and electrical measurements of semiconductor interfaces, this text introduces students to the importance of characterizing and controlling macroscopic electrical properties by atomic-scale techniques. The chapters that follow present the full range of surface and interface techniques now being used to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth for students to master the fundamental principles, with numerous examples to illustrate the strengths and limitations for specific applications. As well as references to the most authoritative sources for broader discussions, the text includes internet links to additional examples, mathematical derivations, tables, and literature references for the advanced student, as well as professionals in these fields. This textbook fills a gap in the existing literature for an entry-level course that provides the physical properties, experimental techniques, and theoretical methods essential for students and professionals to understand and participate in solid-state electronics, physics, and materials science research. An Essential Guide to Electronic Material Surfaces and Interfaces is an introductory-to-intermediate level textbook suitable for students of physics, electrical engineering, materials science, and other disciplines. It is essential reading for any student or professional engaged in surface and interface research, semiconductor processing, or electronic device design.

This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

Solid Surfaces, Interfaces and Thin Films examines both experimental and theoretical aspects of surface, interface and thin film physics. Coverage of magnetic thin films has been expanded, and now includes giant magnetoresistance and the spin-transfer torque mechanism.

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

This textbook is intended as an introduction to surface science for graduate students. It began as a course of lectures that we gave at the University of Paris (Orsay). Its main objectives are twofold: to provide the reader with a compre hensive presentation of the basic principles and concepts of surface physics and to show the usefulness of these concepts in the real world by referring to experiments. It starts at a rather elementary level since it only requires a knowledge of solid state physics, quantum mechanics, thermodynamics and statistical physics which does not exceed the background usually taught to students early in their university courses. However, since it finally reaches an advanced level, we have tried to render it as self-contained as possible so that it remains accessible even to an unexperienced reader. Furthermore, the emphasis has been put on a pedagogical level rather than on a technical level. In this spirit, whenever possible, models which are simplified, but which contain the features that are essential to the appearance of the phenomena, have been set up and solved in a completely analytical way. The logic should be transparent enough for the reader although, most often, a more rigorous solution would need the use of a computer. To conclude, we have tried to give an account of surface physics which should be of use to the theoretician as well as to the experimentalist. The following comments can be made on the contents of this book.

The present monograph represents itself as a tutorial to the ?eld of optical properties of thin solid ?lms. It is neither a handbook for the thin ?lm prac- tioner,noranintroductiontointerferencecoatingsdesign,norareviewonthe latest developments in the ?eld. Instead, it is a textbook which shall bridge the gap between ground level knowledge on optics, electrodynamics, qu- tummechanics,andsolidstatephysicsononehand,andthemorespecialized level of knowledge presumed in typical thin ?lm optical research papers on the other hand. In writing this preface, I feel it makes sense to comment on three points, which all seem to me equally important. They arise from the following (- tually interconnected) three questions: 1. Who can bene?t from reading this book? 2. What is the origin of the particular material selection in this book? 3. Who encouraged and supported me in writing this book? Let me start with the ?rst question, the intended readership of this book. It should be of use for anybody, who is involved into the analysis of - tical spectra of a thin ?lm sample, no matter whether the sample has been prepared for optical or other applications. Thin ?lm spectroscopy may be r- evant in semiconductor physics, solar cell development, physical chemistry, optoelectronics, and optical coatings development, to give just a few ex- ples. The book supplies the reader with the necessary theoretical apparatus for understanding and modelling the features of the recorded transmission and re?ection spectra.

Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.

This volume contains review articles written by the invited speakers at the ninth International Summer Institute in Surface Science (ISISS 1989), held at the Uni versity of Wisconsin-Milwaukee in August of 1989. During the course of ISISS, invited speakers, all internationally recognized experts in the various fields of surface science, present tutorial review lectures. In addition, these experts are asked to write review articles on their lecture topic. Former ISISS speakers serve as advisors concerning the selection of speakers and lecture topics. Emphasis is given to those areas which have not been covered in depth by recent Summer Institutes, as well as to areas which have recently gained in significance and in which important progress has been made. Because of space limitations, no individual volume of Chemistry and Physics of Solid Surfaces can possibly cover the whole area of modern surface science, or even give a complete survey of recent progress in this field. However, an attempt is made to present a balanced overview in the series as a whole. With its comprehensive literature references and extensive subject indices, this series has become a valuable resource for experts and students alike. The collected articles, which stress particularly the gas-solid interface, have been published under the following titles: Surface Science: Recent Progress and Perspectives, Crit. Rev. Solid State Sci.

This volume in the Springer Series on Surface Sciences presents a recent account of advances in the ever-broadening field of electron-and photon-stimulated sur face processes. As in previous volumes, these advances are presented as the proceedings of the International Workshop on Desorption Induced by Electronic Transitions; the fifth workshop (DIET V) was held in Taos, New Mexico, April 1-4, 1992. It will be abundantly clear to the reader that "DIET" is not restricted to desorption, but has for several years included photochemistry, non-thermal surface modification, exciton self-trapping, and many other phenomena that are induced by electron or photon bombardment. However, most stimulated surface processes do share a common physics: initial electronic excitation, localization of the excitation, and conversion of electronic energy into nuclear kinetic energy. It is the rich variation of this theme which makes the field so interesting and fruitful. We have divided the book into eleven parts in order to emphasize the wide range of materials that are examined and to highlight recent experimental and theoretical advances. Naturally, there is considerable overlap between sections, and many papers would be appropriate in more than one part. Part I focuses on perhaps the most active area in the field today: electron attachment. Here the detection and characterization of negative ions formed by attachment of elec trons supplied externally from the vacuum are discussed. In addition, the first observations of negative ions formed by substrate photoelectrons are presented.