Digest of a Symposium sponsored by the Nat. Institute of Standards and Technology (NIST) in cooperation with the IEEE Lasers and Electro-Optics Soc. and the Optical Soc. of Amer. The Symposium consists of 10 invited and 34 contributed papers. Recent events have brought multimode fiber issues back into the measurement arena. Polarization-mode dispersion continues to be a topic of much interest with 2 full sessions devoted to a variety of subtopics in the field. Fiber geometry has several contributions, as does the broad topic of fiber mapping with length (including such parameters as chromatic dispersion and polarization properties).

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.