This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.

This issue of ECS Transactions focuses on issues pertinent to materials growth, characterization, processing, development, application of compound semiconductor materials and devices, including nitrides and wide-bandgap semiconductors.

The papers included in this issue of ECS Transactions were originally presented in the joint symposium ¿State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and device applications: inorganic wide-bandgap semiconductor materials, including III-nitrides, II-oxides, SiC, diamond, II-VI, and emerging materials.