The papers included in this issue of ECS Transactions were originally presented in the symposium ¿State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and device applications: inorganic wide-bandgap semiconductor materials, including III-nitrides, II-oxides, SiC, diamond, II-VI, and emerging materials.

Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.