The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).

Every 3rd issue is a quarterly cumulation.

The shrinking of integrated circuits (ICs) puts tremendous stress on overall device reliability. This unique treatment uses graphic illustration to clearly identify all major failure mode types, so engineers can spot failures before they occur.

This issue of ECS Transactions focuses on issues pertinent to materials growth, characterization, processing, development, application of compound semiconductor materials and devices, including nitrides and wide-bandgap semiconductors.